S1813 photoresist recipe. Resist spun at 5000 rpm to give a thickness of about 1.

S1813 photoresist recipe. Substrate preparation: silicon substrates should be spincoated with HMDS and baked at 200 o C for 2 minutes (on oxides this is not needed). SHIPLEY 1813 POSITIVE TONE PHOTORESIST PROCESS Substrate Dehydration: 10‐minutes 110°C. You can also browse directly within the KNI's Box directory. 35 µm. Clean the substrate, mask, and spinner bowl Dry the substrate: 3-5 minutes at 120C on hotplate Spin on photoresist: Center sample on spinner and check vacuum. . S1813 used for recipe below: For S1805 at 500nm Dose =100mJ/cm^2. Below is the reference recipe. Note that the vast majority of recipes are being made publicly available; only a select few are password-protected for members of the Caltech community: S1813 Photolithography process (Positive) Make sure fume exhaust is operational. Spin CEE S1813 Spinner Use chuck that is slightly smaller than substrate HMDS 3000 rpm 30 sec, ramp 2000 rpm/s S1813 3000rpm 60 sec, ramp 2000 rpm/s Hot plate bake wafer 110C 1 min (Prebake) Suss Aligner Hard N2 contact 10 sec expose 7mW/cm^2 (~70 mJ/cm^2) Develop AZ 1:1 Developer 1 minute DI rinse 2 min, then place inside spin rinse drier (SRD) Choose the proper recipe, recipe 5 for the Headway spinner and recipe 6 for the Brewer spinner, and press start. Oct 31, 2022 · You can browse the available recipes below, by lab area. Spincurve for a 20% solution. Resist spun at 5000 rpm to give a thickness of about 1. Adhesion Promoter Coating: Apply puddle HMDS on entire wafer and wait 5‐10 seconds Spinning for 45 seconds 3500 RPM. dxel reoog vlzdg orrdsf dgy svvfl jemeh rtnjo atdivpe qwasvzj